Now showing items 1-6 of 6

    • Effective mass of electron in monolayer graphene: Electron-phonon interaction 

      Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Özbay, Ekmel (AIP Publishing LLC, 2013-01-25)
      Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic ...
    • Energy relaxation of electrons in InGaN quantum wells 

      Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.; Balkan, N.; Atmaca, G.; Narin, P.; Cakmak, H.; Özbay, Ekmel (Springer New York LLC, 2015-04)
      In this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at ...
    • Energy relaxation probed by weak antilocalization measurements in GaN heterostructures 

      Cheng H.; Biyikli, N.; Xie J.; Kurdak Ç.; Morko̧ H. (2009)
      Energy relaxation and electron-phonon (e-p) interaction are investigated in wurtzite Al0.15Ga0.85 N/AlN/GaN and Al0.83 In0.17 N/AlN/GaN heterostructures with polarization induced two-dimensional electron gases in the ...
    • Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates 

      Ilgaz, A.; Gökden, S.; Tülek, R.; Teke, A.; Özçelik, S.; Özbay, Ekmel (E D P Sciences, 2011-08-18)
      In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the temperature ...
    • The static and dynamic screening of power loss of a two-dimensional electron gas 

      Bennett, C.; Balkan, N.; Tanatar, Bilal; Celik, H.; Cankurtaran, M. (Academic Press, 1998)
      Experimental results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of a two-dimensional electron gas in GaAs/Ga1-xAlxAs quantum-well structures are compared with theoretical models ...
    • Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures 

      Tiras, E.; Celik O.; Mutlu, S.; Ardali, S.; Lisesivdin, S.B.; Özbay, Ekmel (2012)
      The two-dimensional (2D) electron energy relaxation in Al 0.25Ga 0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. ...