Now showing items 1-2 of 2

    • Carrier-induced refractive index change in InN 

      Bulutay, C.; Zakhleniuk, N. A. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008)
      Rapid development of InN technology demands comprehensive assessment of the electronic and optoelectronic potential of this material. In this theoretical work the effect of free electrons on the optical properties of the ...
    • Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires 

      Keleş, Ü.; Çakan, A.; Bulutay, C. (A I P Publishing LLC, 2015)
      We explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the ...