Now showing items 1-7 of 7

    • A charge inverter for III-nitride light-emitting diodes 

      Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, Hilmi Volkan; Sun, X. W. (American Institute of Physics Inc., 2016)
      In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ...
    • A hole modulator for InGaN/GaN light-emitting diodes 

      Zhang, Z-H.; Kyaw, Z.; Liu W.; Ji Y.; Wang, L.; Tan S.T.; Sun, X. W.; Demir, Hilmi Volkan (American Institute of Physics, 2015)
      The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active ...
    • Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering 

      Zhang, Zi-Hui; Ju, Z.; Liu W.; Tan S.T.; Ji Y.; Kyaw, Z.; Zhang X.; Hasanov N.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2014)
      The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
    • On the hole accelerator for III-nitride light-emitting diodes 

      Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, Hilmi Volkan; Sun, X. W. (American Institute of Physics Inc., 2016)
      In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer ...
    • Performance enhancement of GaN metal-semiconductor-metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer 

      Kumar, M.; Tekcan, B.; Okyay, A., K. (AVS Science and Technology Society, 2015)
      The authors demonstrate improved device performance of GaN metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO2 (UT-HfO2) layer on GaN. The UT-HfO2 interfacial layer is grown by atomic layer ...
    • Quantum dot/light-emitting electrochemical cell hybrid device and mechanism of its operation 

      Frohleiks, J.; Wepfer, S.; Kelestemur Y.; Demir, Hilmi Volkan; Bacher, G.; Nannen E. (American Chemical Society, 2016)
      A new type of light-emitting hybrid device based on colloidal quantum dots (QDs) and an ionic transition metal complex (iTMC) light-emitting electrochemical cell (LEC) is introduced. The developed hybrid devices show light ...
    • Super-radiant surface emission from a quasi-cavity hot electron light emitter 

      O'Brien, A.; Balkan, N.; Boland-Thoms, A.; Adams, M.; Bek, A.; Serpengüzel, A.; Aydınlı, A.; Roberts, J. (Springer New York LLC, 1999)
      The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to the layers of a Ga1 - xAlxAs p-n junction incorporating ...