Now showing items 1-4 of 4

    • Design of multi-octave band GaN-HEMT power amplifier 

      Eren, Gulesin; Şen, Özlem A.; Bölükbaş, Basar; Kurt, Gökhan; Arıcan, Orkun; Cengiz, Ömer; Ünal, Sıla T.K.; Durmuş, Yıldırım; Özbay, Ekmel (IEEE, 2012)
      This paper describes design, fabrication and measurement of 6 GHz - 18 GHz monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is realized as coplanar waveguide (CPW) circuit using 0.3 μm-gate Gallium-Nitride ...
    • High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration 

      Yu, H.-Y.; Kobayashi, M.; Jung, W. S.; Okyay, Ali Kemal; Nishi, Y.; Saraswat, K. C. (IEEE, 2009)
      We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) ...
    • In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon 

      Tokel, O.; Turnalı, A.; Makey, G.; Elahi, P.; Çolakoǧlu, T.; Ergeçen E.; Yavuz, Ö.; Hübner R.; Borra, M. Z.; Pavlov, I.; Bek, A.; Turan, R.; Kesim, D. K.; Tozburun, S.; Ilday, S.; Ilday, F. Ö. (Nature Publishing Group, 2017)
      Silicon is an excellent material for microelectronics and integrated photonics 1-3, with untapped potential for mid-infrared optics 4 . Despite broad recognition of the importance of the third dimension 5,6, current ...
    • Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 

      Bosi G.; Raffo A.; Vadalà V.; Trevisan F.; Vannini G.; Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel (IEEE, 2016)
      In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the ...