Now showing items 1-2 of 2

    • Electrical performance of InAs/AlSb/GaSb superlattice photodetectors 

      Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydinli, A. (Academic Press, 2016)
      Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification ...
    • Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer 

      Zhang, Z.-H.; Tan, S.T.; Liu W.; Ju, Z.; Zheng, K.; Kyaw, Z.; Ji, Y.; Hasanov, N.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)
      This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ...