Browsing by Keywords "Electric properties"
Now showing items 1-14 of 14
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Charging / discharging of thin PS / PMMA films as probed by dynamic x-ray photoelectron spectroscopy
(2007)Polystyrene / polymethyl methacrylate (PS-PMMA) thin films were analyzed for detecting phase separation as well as probing their electrical responses by XPS. It was also shown that electrical parameters like resistance or ... -
Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors
(2013)This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, ... -
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014)In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed ... -
Electrical conduction properties of Si δ-doped GaAs grown by MBE
(2009)The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25-300 K. The temperature dependence of carrier concentration shows a characteristic minimum at ... -
Electronic transport through a kink in an electron waveguide
(Institute of Electrical and Electronics Engineers, 1994)The current-voltage denendence correspondinp to electronic transport through a kink in an electronic waveguide is analyzed. No phase breaking dissipation mechanisms are considered, but the effects of the Coulomb interaction ... -
Experimental and finite element analysis of EDM process and investigation of material removal rate by response surface methodology
(2013)In this study, thermal modeling and finite element simulation of electrical discharge machining (EDM) has been done, taking into account several important aspects such as temperature-dependent material properties, shape ... -
Extracting power from sub-wavelength apertures by using electrically small resonators: Phenomenology, modeling, and applications
(2012)In this contribution, we review our recent work on the extraction of the electromagnetic power from electrically small apertures by using metamaterial-inspired resonators. First, we present an antenna interpretation of the ... -
Frequency and temperature dependence of the dielectric and AC electrical conductivity in (Ni/Au)/AlGaN/AlN/GaN heterostructures
(Elsevier, 2010)The dielectric properties and AC electrical conductivity (σ ac)of the (Ni/Au)/Al 0.22Ga 0.78N/AlN/GaN heterostructures, with and without the SiNx passivation, have been investigated by capacitance-voltage and conductance-voltage ... -
Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications
(2006)Semi-insulating character (sheet resistivity of 3.26 × 10 11 Ω/sq) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor (HEMT) applications on an AlN buffer layer. Electrical and structural ... -
Lineshapes, shifts and broadenings in dynamical X-ray photoelectron spectroscopy
(2009)We describe in detail a model that can be used to estimate the X-ray photoelectron spectroscopic data of surfaces when a time varying bias or a modulation of the electrical properties of the surface is applied by external ... -
RF radiometery sensor sensitivity and detection profile
(2008)Temperature sensing using microwave radiometry has proven value for non-invasively measuring the absolute temperature of tissues inside the human body. However, current clinical radiometers operate in GHz or infrared ... -
Room-temperature larger-scale highly ordered nanorod imprints of ZnO film
(Optical Society of American (OSA), 2013)Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a ... -
Ta/Si Schottky diodes fabricated by magnetron sputtering technique
(2010)Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ... -
Temperature-and excitation intensity-dependent photoluminescence in TlInSeS single crystals
(American Institute of Physics, 2002)Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460-800 nm and in the temperature range 10-65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T ...
