Now showing items 1-4 of 4

    • Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity 

      Bıyıklı, Necmi; Kimukin, I.; Aytur, O.; Özbay, Ekmel (IEEE, 2004)
      We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values ...
    • Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals 

      Gasanly, N. M.; Aydınlı, A.; Salihoglu, Ö. (Wiley, 2001)
      Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the ...
    • Thermally stimulated currents in layered Ga4SeS3 semiconductor 

      Aytekin, S.; Yuksek, N.S.; Goktepe, M.; Gasanly, N.M.; Aydınlı, Atilla (2004)
      Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the current flowing along the c-axis in the temperature range of 10 to 150 K. The results are ...
    • Trapping centers in undoped GaS layered single crystals 

      Gasanly, N. M.; Aydınlı, Atilla; Yüksek, N. S.; Salihoglu, Ö. (Springer, 2003)
      Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis ...