Browsing by Keywords "Diodes"
Now showing items 1-12 of 12
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Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015)We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality ... -
Critical role of CdSe nanoplatelets in color-converting CdSe/ZnS nanocrystals for InGaN/GaN light-emitting diodes
(OSA - The Optical Society, 2016)Here we report CdSe nanoplatelets that are incorporated into color-converting CdSe/ZnS nanocrystals for InGaN/GaN light-emitting diodes. The critical role of CdSe nanoplatelets as an exciton donor for the color conversion ... -
Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
(AIP Publishing, 2013)A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) ... -
Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysis
(American Institute of Physics, 2004)Gallium nitride can offer a high-power alternative for millimeter-wave Gunn oscillators. Hence, an ensemble Monte Carlo-based comprehensive theoretical assessment of efficiency and harmonic enhancement in n-type GaN Gunn ... -
Electroluminescence efficiency enhancement in quantum dot light-emitting diodes by embedding a silver nanoisland layer
(Wiley-VCH Verlag, 2015)A colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced electroluminescence by embedding a thin layer of Ag nanoislands into hole transport layer. The maximum external quantum efficiency ... -
Highly flexible, full-color, top-emitting quantum dot light-emitting diode tapes
(2013)We report flexible tapes of high-performance, top-emitting, quantum dot based, light-emitting diodes (QLEDs) with multicolor emission, actively working even when flexed. The resulting QLED tapes reach a high peak luminance ... -
Implementation of high-quality warm-white light-emitting diodes by a model-experimental feedback approach using quantum dot-salt mixed crystals
(American Chemical Society, 2015)In this work, a model-experimental feedback approach is developed and applied to fabricate high-quality, warm-white light-emitting diodes based on quantum dots (QDs) as color-conversion materials. Owing to their unique ... -
Nanocrystal integrated light emitting diodes based on radiative and nonradiative energy transfer for the green gap
(2009)Recently the photometric conditions for ultra-efficient solid-state lighting have been discussed [1-2]. These studies show that a luminous efficacy of optical radiation at 408 lm/Wopt and a color rendering index (CRI) of ... -
On-chip characterization of THz Schottky diodes using non-contact probes
(IEEE Computer Society, 2016)We present non-contact characterization of GaAs Schottky contacts in the 140-220 GHz band. The non-contact probing technique utilizes planar on-chip antennas that are monolithically integrated with the coplanar waveguide ... -
A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach
(Cambridge University Press, 2017)In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky ... -
Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors
(IOP Institute of Physics Publishing, 2012)We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a ... -
Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications
(AIP Publishing LLC, 2014-03-12)Three InGaAs/InP structures for photodetector applications were grown with different indium compositions by MBE technique. The structural properties of the samples have been obtained by means of high resolution X-ray ...
