Browsing by Keywords "Detectivity"
Now showing items 1-10 of 10
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AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain
(2008)We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents ... -
Analytic thermal modeling for dc to midrange modulation frequency response for thin film high-Tc superconductive edge-transition bolometers
(OSA Publishing, 2001-03-01)Thin-film superconductive edge-transition bolometers are modeled with a one-dimensional analytic thermal model with joule heating, film and substrate materials, and the physical interface effects taken into consideration. ... -
Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors
(AIP, 2012)Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single ... -
Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors
(SPIE, 2005)Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ... -
High-performance AlxGA1-xN-Based UV photodetectors for visible/solar-blind applications
(Bilkent University, 2004)High-performance detection of ultraviolet (UV) radiation is of great importance for a wide range of applications including flame sensing, environmental (ozone layer) monitoring, detection of biological/chemical ... -
High-performance solar-blind AlGaN photodetectors
(SPIE, 2005)Design, fabrication, and characterization of high-performance Al xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ... -
High-performance solar-blind photodetectors based on AlxGa 1_xN heterostructures
(IEEE, 2004)Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal ... -
Investigation of bias current and modulation frequency dependences of detectivity of YBCO TES and the effects of coating of Cu-C composite absorber layer
(2009)Bolometric response and noise characteristics of YBCO superconductor transition edge IR detectors with relatively sharp transition and its resulting detectivity are investigated both theoretically and experimentally. The ... -
Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors
(IOP Institute of Physics Publishing, 2012)We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a ... -
Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
(American Institute of Physics, 2002)We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible ...
