Now showing items 1-3 of 3

    • Donor - acceptor pair recombination in Tl2InGaS4 layered crystals 

      Goksen, K.; Gasanly, N.M.; Ozkan H.; Aydinli, A. (2005)
      Photoluminescence (PL) spectra of Tl2InGaS4 layered single crystals were studied in the temperature range 15-150 K and wide laser excitation intensity range 0.01-110.34 Wcm-2. We observed a total of three PL bands, one ...
    • Infrared photoluminescence from TlGaS2 layered single crystals 

      Yuksek, N. S.; Gasanly, N. M.; Aydinli, A.; Ozkan, H.; Acikgoz, M. (Wiley - V C H Verlag GmbH & Co., 2004)
      Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K. We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) ...
    • Trap levels in layered semiconductor Ga2SeS 

      Aydinli, A.; Gasanly, N. M.; Aytekin, S. (Elsevier, 2004)
      Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in ...