Now showing items 1-2 of 2

    • Effect of substitutional as impurity on electrical and optical properties of β-Si3N4 structure 

      Kutlu, E.; Narin, P.; Atmaca, G.; Sarikavak-Lisesivdin, B.; Lisesivdin, S. B.; Özbay, E. (Elsevier Ltd, 2016)
      β-Si3N4 is used as the gate dielectric for surface passivation in GaN-based, high-electron mobility transistors(HEMTs). In this study, the electrical and optical characteristics of the hexagonal β-Si3N4 crystal structure ...
    • Trap levels in layered semiconductor Ga2SeS 

      Aydinli, A.; Gasanly, N. M.; Aytekin, S. (Elsevier, 2004)
      Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in ...