Now showing items 1-6 of 6

    • Effect of the passivation layer on the noise characteristics of mid-wave-infrared InAs / GaSb superlattice photodiodes 

      Tansel, T.; Kutluer, K.; Salihoglu, Ö.; Aydinli, A.; Aslan, B.; Arikan, B.; Kilinc, M. C.; Ergun, Y.; Serincan, U.; Turan, R. (IEEE, 2012)
      The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation ...
    • Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors 

      Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydinli, A. (Elsevier, 2013)
      We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier ...
    • Gibbs free energy assisted passivation layers 

      Salihoglu, O.; Tansel T.; Hostut M.; Ergun Y.; Aydinli A. (SPIE, 2016)
      Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical ...
    • High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers 

      Ergun, Y.; Hostut, M.; Tansel, T.; Muti, bdullah; Kilic, A.; Turan, R.; Aydınlı, Atilla (SPIE, 2013)
      We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave ...
    • Skin-like self-assembled monolayers on InAs / GaSb superlattice photodetectors 

      Salihoglu, O.; Muti, A.; Kutluer, K.; Tansel, T.; Turan, R.; Aydinli, A. (IOP Institute of Physics Publishing, 2012)
      We report on the effects of monolayer (ML) thick skin-like octadecanethiol (ODT, CH 3[CH 2] 17SH) on type-II InAs/GaSb MWIR photodetectors. Circumventing the ageing effects of conventional sulfur compounds, we use ODT, a ...
    • Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity 

      Biyikli, N.; Aytur, O.; Kimukin, I.; Tut, T.; Özbay, Ekmel (American Institute of Physics, 2002)
      We report on the design, fabrication, and characterization of solar-blind Schottky photodiodes with low noise and high detectivity. The devices were fabricated on n-/n+ AlGaN/GaN heterostructures using a microwave compatible ...