Browsing by Keywords "Current density"
Now showing items 1-12 of 12
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AlGaN/GaN HEMT-based fully monolithic X-band low noise amplifier
(Wiley, 2005-04)A fully monolithic AlGaN/GaN HEMT-based low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of -7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz. The ... -
Analysis of an arbitrary profile reflector antenna system having resistive type surface–E-polarization case
(IEEE, 2006-06)The regularized solution is performed for arbitrary shape conic section profile geometry. In this case the reflector surface is taken as made up of resistive type material. The problem is formulated depending on the circular ... -
Current constrained voltage scaled reconstruction (CCVSR) algorithm for MR-EIT and its performance with different probing current patterns
(Institute of Physics Publishing, 2003)Conventional injected-current electrical impedance tomography (EIT) and magnetic resonance imaging (MRI) techniques can be combined to reconstruct high resolution true conductivity images. The magnetic flux density ... -
Experimental results for 2D magnetic resonance electrical impedance tomography (MR-EIT) using magnetic flux density in one direction
(Institute of Physics Publishing, 2003)Magnetic resonance electrical impedance tomography (MR-EIT) is an emerging imaging technique that reconstructs conductivity images using magnetic flux density measurements acquired employing MRI together with conventional ... -
Frequency responses of ground-penetrating radars operating over highly lossy grounds
(IEEE, 2002)The finite-difference time-domain (FDTD) method is used to investigate the effects of highly lossy grounds and the frequency-band selection on ground-penetrating-radar (GPR) signals. The ground is modeled as a heterogeneous ... -
High-performance solar-blind AlGaN photodetectors
(IEEE, 2004)High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor ... -
High-performance solar-blind AlGaN Schottky photodiodes
(Materials Research Society, 2003)High-performance solar-blind AlGaN-based Schottky photodiodes have been demonstrated. The detectors were fabricated on MOCVD-grown AlGaN/GaN heterostructures using a microwave-compatible fabrication process. Current-voltage, ... -
Implementation of graphene multilayer electrodes in quantum dot light-emitting devices
(Springer Verlag, 2015)Graphene is a highly attractive candidate for implementation as electrodes in next-generation large-area optoelectronic devices thanks to its high electrical conductivity and high optical transparency. In this study, we ... -
Low dark current metal-semiconductor-metal photodiodes based on semi-insulating GaN
(AIP Publishing LLC, 2006)Metal-semiconductor-metal photodetectors on semi-insulating GaN templates were demonstrated and compared with photodetectors fabricated on regular GaN templates. Samples were grown on a metal organic chemical vapor deposition ... -
Modeling of ground-penetrating-radar antennas with shields and simulated absorbers
(IEEE, 2001)A three-dimensional (3-D) finite-difference time domain (FDTD) scheme is employed to simulate ground-penetrating radars. Conducting shield walls and absorbers are used to reduce the direct coupling to the receiver. Perfectly ... -
On the choice of basis functions to model surface electric current densities in computational electromagnetics
(Wiley-Blackwell Publishing, Inc., 1999-11)Basis functions that are used to model surface electric current densities in the electric field integral equations of computational electromagnetics are analyzed with respect to how well they model the charge distribution, ... -
Solar-blind A1GaN-based p-i-n photodiodes with low dark current and high detectivity
(IEEE, 2004)We report solar-blind AlxGal1-xN-based heterojunction p-i-n photodiodes with low dark current and high detectivity. After the p+ GaN cap layer was recess etched, measured dark current was below 3 fA for reverse bias values ...
