Browsing by Keywords "Crystal growth"
Now showing items 1-5 of 5
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Anharmonicity of zone-center optical phonons: Raman scattering spectra of GaSe0.5S0.5 layered crystal
(IOPscience, 2002)The temperature dependencies (10-300 K) of the eight Raman-active mode frequencies and linewidths in GaSe0.5S0.5 layered crystal have been measured in the frequency range from 10 to 320 cm-1. We observed softening and ... -
Crystal growth and investigations on the effects of hydrogen doping of VO2
(Bilkent University, 2019-03)Vanadium Dioxide(VO2) has been studied extensively for its interesting electronic structure that allows it to go through Metal-Insulator Transition(MIT) at 65 C. The nature of this phenomena is not entirely clear and ... -
Thermally stimulated current observation of trapping centers in undoped GaSe layered single crystals
(Wiley, 2001)Undoped p-GaSe layered single crystals were grown using Bridgman technique. Thermally stimulated current measurements in the temperature range of 10-300 K were performed at a heating rate of 0.18 K/s. The analysis of the ... -
Trap levels in layered semiconductor Ga2SeS
(Elsevier, 2004)Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in ... -
Trapping centers in undoped GaS layered single crystals
(Springer, 2003)Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis ...
