Now showing items 1-2 of 2

    • Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers 

      Dana, Aykutlu; Aǧan, S.; Tokay, S.; Aydınlı, Atilla; Finstad, T. G. (Wiley, 2007)
      Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...
    • SiGe nanocrystal formation in PECVD grown SiOx/Si/Ge/Si/SiOx multilayers 

      Ağan, S.; Aydınlı, Atilla (World Scientific Publishing, 2009)
      We have studied alternating gennanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were detennined by X-ray ...