Browsing by Keywords "Coplanar waveguide"
Now showing items 1-7 of 7
-
Compact and wideband CPW wilkinson power dividers for GaN MMIC applications
(IEEE, 2018)This paper presents two types of modified CPW Wilkinson power dividers at X-band using GaN MMIC technology on a SiC substrate. Lumped element equivalents of the transmission line arms are used and they are capacitively ... -
Improved Wilkinson power divider structures for millimeter-wave applications
(Bilkent University, 2019-01)Communication systems, radars, electronic warfare and space applications desire integrated circuits with higher operating frequencies. Working at the millimeter-wave region increases data rates, provides a more efficient use ... -
Structural field plate length optimization for high power applications
(IEEE, 2014)In this work, we report GaN high-electron-mobility-transistors (HEMTs) on SiC with field plates of various dimensions for optimum performance. 0.6 μm gate length, 3 μm drain source space AlGaN/GaN HEMTs with field-plate ... -
Study of the power performance of gaN based HEMTs with varying field plate lengths
(North Atlantic University Union, 2015)In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm ... -
X Band GaN Based MMIC power amplifier with 36.5dBm P1-dB for space applications
(IEEE, 2018)An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AIGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ... -
X band GaN based MMIC power amplifier with 36.5dBm P1-dB for space applications
(IEEE, 2018)An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AlGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is ... -
X-band high power GaN SPDT MMIC RF switches
(IEEE, 2019)This paper describes the design results and measured performance of three different high power, low loss and high isolation GaN high electron mobility transistor (HEMT) based single-pole double-throw (SPDT) RF switches. ...