Now showing items 1-5 of 5

    • Band alignment issues related to HfO2/SiO2/p-Si gate stacks 

      Sayan, S.; Emge, T.; Garfunkel, E.; Zhao, X.; Wielunski, L.; Bartynski, R. A.; Vanderbilt, D.; Suehle, J. S.; Süzer, Şefik; Banaszak Holl, M. (American Institute of Physics, 2004-12-15)
      The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence ...
    • Enhancement and inhibition of photoluminescence in hydrogenated amorphous silicon nitride microcavities 

      Serpenguzel, A.; Aydınlı, Atilla; Bek, A. (Optical Society of America, 1997-09-01)
      A Fabry-Perot microcavity is used for the enhancement and inhibition of photoluminescence in hydrogenated amorphous silicon nitride. The amplitude of the photoluminescence is enhanced 4 times, while its linewidth is reduced ...
    • Low dielectric constant Parylene-F-like films for intermetal dielectric applications 

      Hanyaloglu, B.; Aydınlı, Atilla; Oye, M.; Aydi, E. S. (American Institute of Physics, 1999)
      We report on the dielectric properties and thermal stability of thin polymer films that art: suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-Iike ...
    • Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma 

      Haider A.; Ozgit Akgun, C.; Goldenberg, E.; Okyay, Ali Kemal; Bıyıklı, Necmi (Wiley-Blackwell Publishing, Inc., 2014)
      Hexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N 2 /H 2 plasma in a hollow-cathode plasma- assisted atomic layer deposition ...
    • Microstructural defect properties of InGaN/GaN blue light emitting diode structures 

      Bas, Y.; Demirel, P.; Akin, N.; Başköse, C.; Özen, Y.; Kınacı, B.; Öztürk, M. K.; Özcelik, S.; Özbay, Ekmel (Springer US, 2014-06-28)
      In this paper, we study structural and morphological properties of metal-organic chemical vapour deposition-grown InGaN/GaN light emitting diode (LED) structures with different indium (In) content by means of high-resolution ...