Browsing by Keywords "Chemical-vapor-deposition"
Now showing items 1-5 of 5
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Band alignment issues related to HfO2/SiO2/p-Si gate stacks
(American Institute of Physics, 2004-12-15)The valence and conduction band densities of states for the HfO2/SiO2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence ... -
Enhancement and inhibition of photoluminescence in hydrogenated amorphous silicon nitride microcavities
(Optical Society of America, 1997-09-01)A Fabry-Perot microcavity is used for the enhancement and inhibition of photoluminescence in hydrogenated amorphous silicon nitride. The amplitude of the photoluminescence is enhanced 4 times, while its linewidth is reduced ... -
Low dielectric constant Parylene-F-like films for intermetal dielectric applications
(American Institute of Physics, 1999)We report on the dielectric properties and thermal stability of thin polymer films that art: suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-Iike ... -
Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma
(Wiley-Blackwell Publishing, Inc., 2014)Hexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N 2 /H 2 plasma in a hollow-cathode plasma- assisted atomic layer deposition ... -
Microstructural defect properties of InGaN/GaN blue light emitting diode structures
(Springer US, 2014-06-28)In this paper, we study structural and morphological properties of metal-organic chemical vapour deposition-grown InGaN/GaN light emitting diode (LED) structures with different indium (In) content by means of high-resolution ...