Now showing items 1-3 of 3

    • Silicon nanoparticle charge trapping memory cell 

      El-Atab, N.; Ozcan, A.; Alkis, S.; Okyay, A., K.; Nayfeh, A. (Wiley-VCH Verlag, 2014)
      A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and ...
    • Thin-film ZnO charge-trapping memory cell grown in a single ALD step 

      Oruc, F. B.; Cimen, F.; Rizk, A.; Ghaffari, M.; Nayfeh, A.; Okyay, A., K. (Institute of Electrical and Electronics Engineers, 2012-10-26)
      A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first ...
    • ZnO based charge trapping memory with embedded nanoparticles 

      Rizk, A.; Oruç, Feyza B.; Okyay, Ali K.; Nayfeh, A. (IEEE, 2012)
      A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. ...