Now showing items 1-4 of 4

    • A charge inverter for III-nitride light-emitting diodes 

      Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, H. V.; Sun, X. W. (American Institute of Physics Inc., 2016)
      In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes (LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ...
    • A hole modulator for InGaN/GaN light-emitting diodes 

      Zhang, Z-H.; Kyaw, Z.; Liu W.; Ji Y.; Wang, L.; Tan S.T.; Sun, X. W.; Demir, H. V. (American Institute of Physics, 2015)
      The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active ...
    • Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes 

      Zhang, Y.; Zhang Z.-H.; Tan S.T.; Hernandez-Martinez, P. L.; Zhu B.; Lu S.; Kang, X. J.; Sun, X. W.; Demir, H. V. (American Institute of Physics Inc., 2017)
      Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region ...
    • On the hole accelerator for III-nitride light-emitting diodes 

      Zhang Z.-H.; Zhang, Y.; Bi, W.; Geng, C.; Xu S.; Demir, H. V.; Sun, X. W. (American Institute of Physics Inc., 2016)
      In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer ...