Browsing by Keywords "Channel materials"
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Thin-film ZnO charge-trapping memory cell grown in a single ALD step
(Institute of Electrical and Electronics Engineers, 2012-10-26)A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first ... -
TiO2 thin film transistor by atomic layer deposition
(SPIE, 2013)In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film ...