Now showing items 1-20 of 25

    • 1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector 

      Necmi, B.; Kimukin, I.; Özbay, Ekmel; Tuttle, G. (IEEE, Piscataway, NJ, United States, 2000)
      GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.
    • 100-GHz resonant cavity enhanced Schottky photodiodes 

      Onat, B. M.; Gökkavas, M.; Özbay, Ekmel; Ata, E. P.; Towe, E.; Ünlü, M. S. (Institute of Electrical and Electronics Engineers, 1998)
      Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE ...
    • 45 GHz bandwidth-efficiency resonant cavity enhanced ITO-Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Özbay, Ekmel; Gökkavas, M.; Ünlü, M. S. (OSA, 2001)
      We demonstrated high-performance resonant cavity enhanced ITO-Schottky photodiodes. We achieved a peak efficiency of 75% around 820 nm with a 3-dB bandwidth of 60 GHz resulting in a bandwidth-efficiency product of 45 GHz.
    • 45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes 

      Biyikli, N.; Kimukin, I.; Aytür, O.; Gökkavas, M.; Ünlü, M. S.; Özbay, Ekmel (IEEE, 2001)
      High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ...
    • All-fiber all-normal-dispersion femtosecond laser with nonlinear multimodal interference-based saturable absorber 

      Teğin, Uğur; Ortaç, Bülend (Institute of Electrical and Electronics Engineers Inc., 2019)
      Chong et al. demonstrated a stable passively mode-locked all-normal-dispersion fiber laser and pulse generation is attributed to the strong spectral filtering of chirped pulses, dissipative soliton pulses [1]. In the ...
    • Directional processing of ultrasonic arc maps and its comparison with existing techniques 

      Barshan, Billur; Altun, Kerem (IEEE, 2007)
      Directional maximum (DM) technique for processing ultrasonic arc maps (UAMs) is proposed and compared to existing techniques. It employs directional processing in extracting the map of the environment from UAMs. DM aims ...
    • Experimental investigation of layer-by-layer metallic photonic crystals 

      Temelkuran, B.; Altug, H.; Özbay, Ekmel (Institution of Electrical Engineers, 1998-12)
      The authors have investigated the transmission properties and defect characteristics of layer-by-layer metallic photonic crystals. They have demonstrated experimentally that the metallicity gap of these crystals extends ...
    • Experimental study of linear closed-loop control of subsonic cavity flow 

      Yan P.; Debiasi, M.; Yuan X.; Little J.; Özbay H.; Samimy, M. (2006)
      A study is presented of the modeling and implementation of different concepts for linear feedback control of a single-mode resonance shallow cavity flow. When a physics-based linear model is used for cavity pressure ...
    • High-performance 1.55 μm resonant cavity enhanced photodetector 

      Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel (IEEE, 2002)
      A high speed and high efficiency resonant cavity enhanced InGaAs based photodetector was demonstrated. A peak quantum efficiency of 66% was measured along with 31 GHz bandwidth with the device. The photoresponse was found ...
    • High-performance ALGaN-based visible-blind resonant cavity enhanced Schottky photodiodes 

      Kimukin, İbrahim; Bıyıklı, Necmi; Kartaloğlu, Tolga; Aytür, Orhan; Özbay, Ekmel (Materials Research Society, 2003-04)
      We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were ...
    • High-speed 1.55 μm operation of low-temperature-grown GaAs-based resonant-cavity-enhanced p-i-n photodiodes 

      Butun, B.; Biyikli, N.; Kimukin, I.; Aytur, O.; Özbay, Ekmel; Postigo, P. A.; Silveira, J. P.; Alija, A. R. (American Institute of Physics, 2004)
      The 1.55 μm high-speed operation of GaAs-based p-i-n photodiodes was demonstrated and their design, growth and fabrication were discussed. A resonant-cavity-detector structure was used to selectively enhance the photoresponse ...
    • High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes 

      Kimukin, İbrahim; Bıyıklı, Necmi; Özbay, Ekmel (IEEE, 2001)
      High-speed InGaAs based resonant cavity enhanced photodiodes were discussed. The responses of the photodiodes was measured under high incident optical powers. Bandwidth-efficiency (BWE) product was used to measure the ...
    • High-speed visible-blind resonant cavity enhanced AlGaN Schottky photodiodes 

      Biyikli, N.; Kartaloglu, T.; Aytur, O.; Kimukin, I.; Özbay, Ekmel (Materials Research Society, 2003)
      We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/Al 0.2Ga 0.8N Bragg mirror. The devices ...
    • High-speed widely-tunable >90% quantum-efficiency resonant cavity enhanced p-i-n photodiodes 

      Bıyıklı, Necmi; Kimukin, İbrahim; Aytür, Orhan; Gökkavas, M.; Ulu, G.; Mirin, R.; Christensen, D. H.; Ünlü, M. S.; Özbay, Ekmel (IEEE, 1998)
      Widely-tunable high-speed resonant cavity enhanced p-i-n photodiodes were designed, fabricated and tested for operation around 820 nm. The structure was grown by solid-source MBE on GaAs substrates and features high-reflectivity ...
    • Microcavity enhanced amorphous silicon photoluminescence 

      Serpengüzel, Ali; Aydınlı, Atilla; Bek, Alpan (IEEE, 1997)
      A microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk ...
    • Phase-matched self-doubling optical parametric oscillator 

      Kartaloğlu, Tolga; Köprülü, Kahraman G.; Aytür, Orhan (IEEE, 1996)
      A new self-doubling optical parametric oscillator (OPO) uses a single nonlinear crystal for both parametric generation and frequency doubling. It is based on a KTiOPO4 (KTP) crystal pumped by a Ti:Sapphire laser operating ...
    • Photonic-crystal-based resonant-cavity-enhanced detectors 

      Temelkuran, Burak; Özbay, Ekmel; Kavanaugh, J. P.; Tuttle, G.; Ho, K. M. (IEEE, 1998)
      A layer-by-layer three-dimensional photonic crystal, with a full photonic bandgap (PBG) in all directions is proposed. The electrical fields in the cavities of this crystal are usually enhanced, and by placing active devices ...
    • Reflection properties and defect formation in photonic crystals 

      Özbay, Ekmel; Temelkuran, B. (A I P Publishing LLC, 1996-08-05)
      We have investigated the surface reflection properties of a layer-by-layer photonic crystal. By using a Fabry-Perot resonant cavity analogy along with the reflection-phase information of the photonic crystal, we predicted ...
    • Reflection properties of metallic photonic crystals 

      Temelkuran, B.; Özbay, Ekmel; Sigalas, M.; Tuttle, G.; Soukoulis, C. M.; Ho, K. M. (1998)
      We measured reflection-magnitude and reflection-phase properties of metallic photonic crystals. The experimental results are in good agreement with the theoretical calculations. We converted the reflection-phase information ...
    • Resonant cavity-enhanced detectors embedded in photonic crystals 

      Temelkuran, Burak; Özbay, Ekmel (IEEE, 1996)
      Summary form only given. We demonstrate the resonant-cavity-enhanced effect by placing microwave detectors in a layer-by-layer photonic crystal. We used the output of a network analyzer as the microwave source, and fed the ...