Browsing by Keywords "Carrier density"
Now showing items 1-3 of 3
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Determination of the in-plane effective mass and quantum lifetime of 2D electrons in AlGaN/GaN based HEMTs
(2011)Magnetoresistance and Hall resistance measurements have been used to investigate the electronic transport properties of AlGaN/GaN based HEMTs. The Shubnikov-de Haas (SdH) oscillations from magnetoresistance, is obtained ... -
Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method
(Springer, 2009-12-03)The electrical conduction mechanisms in various highly resistive GaN layers of Al x Ga1-x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities ... -
Scattering analysis of two-dimensional electrons in AlGaN/GaN with bulk related parameters extracted by simple parallel conduction extraction method
(American Institute of Physics, 2010-07-15)We carried out the temperature (22-350 K) and magnetic field (0.05 and 1.4 T) dependent Hall mobility and carrier density measurements on Al 0.22Ga0.78N/GaN heterostructures with AlN interlayer grown by metal-organic ...
