Browsing by Keywords "Capacitance"
Now showing items 1-18 of 18
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Calculation of transformer ratio in mason's equivalent circuit for cMUTs
(IEEE, 2006)We present a new method to calculate the transformer ratio of a cMUT in Mason's Equivalent circuit model. The effect of the spring softening capacitance is also included in the analysis. We use the existing turns ratio ... -
Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
(Elsevier Ltd, 2015)We have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality ... -
Charge retention in quantized energy levels of nanocrystals
(Elsevier B.V., 2007)Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon ... -
Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes
(Elsevier, 2010-10-13)The current transport mechanisms in (Ni/Au)-AlN/GaN Schottky barrier diodes (SBDs) were investigated by the use of current-voltage characteristics in the temperature range of 80-380 K. In order to determine the true current ... -
Design charts to maximize the gain-bandwidth product of capacitive micromachined ultrasonic transducers
(IEEE, 2005)In this work we define a performance measure for capacitive micromachined ultrasonic transducers (cMUT) in the form of a gain-bandwidth product to investigate the conditions that optimize the gain and bandwidth with respect ... -
Determination of current transport and trap states density in AlInGaN/GaN heterostructures
(Elsevier, 2019)The energy distribution and the relaxation time constant of the trap states with respect to conduction bands in the (Ni/Au) Schottky contact on AlInGaN/GaN heterostructures were investigated using the admittance technique. ... -
Effect of film thickness on the electrical properties of AlN films prepared by plasma-enhanced atomic layer deposition
(Institute of Electrical and Electronics Engineers Inc., 2015)In this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate ... -
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1-xN/AIN/GaN heterostructures
(Wiley, 2010)(Ni/Au)Alx Ga1-x N/AlN/GaN(x = 0.22) heterostructures with and without a passivation layer of the SiNx were fabricated in order to see the effect of the insulator layer on the main electrical parameters such as zero-bias ... -
A figure of merit for optimization of nanocrystal flash memory design
(2008)Nanocrystals can be used as storage media for carriers in flash memories. The performance of a nanocrystal flash memory depends critically on the choice of nanocrystal size and density as well as on the choice of tunnel ... -
Improved performance of cMUT with nonuniform membranes
(IEEE, 2005-09)When capacitive micromachined ultrasonic transducers are immersed in water, the bandwidth of the device is limited by the membrane's second resonance frequency. At this frequency no mechanical power to immersion medium can ... -
Investigation of trap states in AlInN/AlN/GaN heterostructures by frequency-dependent admittance analysis
(Springer US, 2010-09-17)We present a systematic study on the admittance characterization of surface trap states in unpassivated and SiN x -passivated Al 0.83In 0.17N/AlN/GaN heterostructures. C-V and G/ω-V measurements were carried out in the ... -
Methods for probing charging properties of polymeric materials using XPS
(2010)Various thin polystyrene, PS, and poly(methyl methacrylate), PMMA and PS + PMMA blend films have been examined using the technique of recording X-ray photoelectron spectrum while the sample is subjected to ±10 V d.c. bias, ... -
A new detection method for capacitive micromachine ultrasonic transducers
(IEEE, 2001)Capacitive micromachine ultrasonic transducers (cMUT) have become an alternative to piezoelectric transducers in the past few years. They consist of many small circular membranes that are connected in parallel. In this ... -
A new detection method for capacitive micromachined ultrasonic transducers
(IEEE, 1998)Capacitive micromachined ultrasonic transducers (cMUT) have become an alternative to piezoelectric transducers in the past few years. They usually consist of many small membranes all in parallel. In this work we report a ... -
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods
(Elsevier, 2011-06-08)In order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage ... -
A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach
(Cambridge University Press, 2017)In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky ... -
Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing
(Elsevier BV * North-Holland, 2017)Among perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the ... -
XPS analysis with pulsed voltage stimuli
(2006)We record XPS spectra while applying 0 to +10 V or 0 to -10 V square pulses to the sample rod, which normally results in twinning of all peaks at correspondingly increased (for +10 V) or decreased (for -10 V) binding ...
