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    • Frequency dependent electrical characteristics of (Ni/Au)/AlGaN/AlN/GaN heterostructures 

      Taşçioǧlu, I.; Uslu, H.; Şafak, Y.; Özbay, Ekmel (Optoelectronica,National Institute of Research and Development for Optoelectronics, 2010)
      The main electrical parameters such as ideality factor (n), zero bias barrier height (Bo), series resistances (R s), depletion layer width (W D) and interface state densities (N SS) of (Ni/Au)/AlGaN/AlN/GaN heterostructures ...