Browsing by Keywords "C-V characteristic"
Now showing items 1-2 of 2
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Charge Trapping Memory with 2.85-nm Si-Nanoparticles Embedded in HfO2
(ECS, 2015-05)In this work, the effect of embedding 2.85-nm Si-nanoparticles charge trapping layer in between double layers of high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> oxides is studied. Using high frequency (1 MHz) ... -
Graphene Nanoplatelets Embedded in HfO2 for MOS Memory
(Electrochemical Society Inc., 2015)In this work, a MOS memory with graphene nanoplatelets charge trapping layer and a double layer high-κ Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> tunnel oxide is demonstrated. Using C-V<inf>gate</inf> measurements, the ...