Browsing by Keywords "Broadband"
Now showing items 1-7 of 7
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Broadband absorption enhancement in an uncooled microbolometer infrared detector
(SPIE, 2014)This paper introduces a method for a broadband absorption enhancement in the LWIR range (8-12 μm), in single layer microbolometer pixels with 35 μm pitch. For the first time in the literature, this study introduces a very ... -
Broadband GaN LNA MMIC development with the micro/nano process development by kink-effect in S22 consideration
(Bilkent University, 2021-01)Broadband low noise amplifiers (LNA) are one of the key components of the nu-merous applications such as communication, electronic warfare, and radar. The requirements for higher bandwidth, higher speed, higher survivability, ... -
Design and analysis of metamaterial based perfect absorbers
(Bilkent University, 2019-08)Subwavelength light absorbers have an enormous potential on applications such as photodetection, optoelectronics, solar cells and sensing. Scaling down the device dimensions provides artificial and advanced properties. ... -
From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad-flat no-leads packaged Gallium-Nitride low noise amplifier monolithic microwave integrated circuit
(John Wiley & Sons Ltd., 2021-01-19)This paper describes an air cavity quad-flat no-leads (QFN) over-molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT ... -
GaN based LNA MMICs for X-band applications
(Institute of Electrical and Electronics Engineers, 2020)In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ... -
GaN-on-SiC LNA for UHF and L-Band
(IEEE, 2019)In this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA ... -
Theoretical and simulation studies on designing a phase-reversal-based broadband CMUT with flat passband and improved noise rejections for SHM
(Institute of Electrical and Electronics Engineers, 2022-11-15)In the past two decades, capacitive micromachined ultrasonic transducers (CMUTs) have been greatly explored for applications in structural health monitoring (SHM); however, relevant theories about their broadband sense ...
