Now showing items 1-4 of 4

    • A controllable spin prism 

      Hakiolu, T. (IOP Institute of Physics Publishing, 2009)
      Based on Khodas et al (2004 Phys. Rev. Lett. 92 086602), we propose a device acting like a controllable prism for an incident spin. The device is a large quantum well where Rashba and Dresselhaus spin-orbit interactions ...
    • Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures 

      Arslan, E.; Bütün, S.; Şafak, Y.; Uslu, H.; Tascioglu I.; Altindal, S.; Özbay, E. (ELSEVIER, 2010)
      The forward and reverse bias I-V, C-V, and G/ω-V characteristics of (Ni/Au) Schottky barrier diodes (SBDs) on the Al 0.22Ga 0.78N/AlN/GaN high-electron-mobility-transistor (HEMTs) without and with SiN x insulator layer ...
    • The substrate temperature dependent electrical properties of titanium dioxide thin films 

      Yildiz, A.; Lisesivdin, S.B.; Kasap, M.; Mardare, D. (2010)
      Titanium dioxide thin films were obtained by a dc sputtering technique onto heated glass substrates. The relationship between the substrate temperature and the electrical properties of the films was investigated. Electrical ...
    • Ta/Si Schottky diodes fabricated by magnetron sputtering technique 

      Ocak, Y.S.; Genisel, M.F.; Kiliçoǧlu, T. (2010)
      Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier ...