Now showing items 1-2 of 2

    • A hole accelerator for InGaN/GaN light-emitting diodes 

      Zhang, Z. H.; Liu, W.; Tan, S. T.; Ji, Y.; Wang, L.; Zhu, B.; Zhang, Y.; Lu, S.; Zhang, X.; Hasanov, N.; Sun, X. W.; Demir, Hilmi Volkan (AIP Publishing, 2014)
      The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low ...
    • Low dark current N structure superlattice MWIR photodetectors 

      Salihoğlu, O.; Muti, Abdullah; Turan, R.; Ergun, Y.; Aydınlı, Atilla (SPIE, 2014)
      Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises ...