Now showing items 1-3 of 3

    • 45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes 

      Bıyıklı, Necmi; Kimukin, I.; Aytür, O.; Gökkavas, M.; Ünlü, M. S.; Özbay, Ekmel (IEEE, 2001)
      High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency ...
    • High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current 

      Tut, T.; Bıyıklı, Necmi; Kimukin, I.; Kartaloglu, T.; Aytur, O.; Unlu, M. S.; Özbay, Ekmel (Pergamon Press, 2005-01)
      Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized ...
    • InGaAs-based high-performance p-i-n photodiodes 

      Kimukin, I.; Bıyıklı, Necmi; Butun, B.; Aytur, O.; Ünlü, S. M.; Özbay, Ekmel (IEEE, 2002-03)
      In this letter, we have designed, fabricated, and characterized high-speed and high efficiency InGaAs-based p-i-n photodetectors with a resonant cavity enhanced structure. The devices were fabricated by a microwave-compatible ...