Browsing by Keywords "Band structure"

Now showing items 1-20 of 33

    • Accurate method for obtaining band gaps in conducting polymers using a DFT/hybrid approach 

      Salzner, U.; Pickup, P. G.; Poirier, R. A.; Lagowski, J. B. (American Chemical Society, 1998)
      DFT calculations on a series of oligomers have been used to estimate band gaps, ionization potentials, electron affinities, and bandwidths for polyacetylene, polythiophene, polypyrrole, polythiazole, and a thiophene - ...

    • Accurate modeling of metamaterials with MLFMA 

      Ergül, Özgür; Ünal, Alper; Gürel, Levent (ESA Publications, 2006)
      Electromagnetic modelling of large metamaterial (MM) structures employing multilevel fast multipole algorithm (MLFMA) is reported. MMs are usually constructed by periodically embedding unit cells, such as split-ring ...

    • Band gap and optical transmission in the Fibonacci type one-dimensional A5B6C7 based photonic crystals 

      Simsek S.; Koc, H.; Palaz S.; Oltulu, O.; Mamedov, A. M.; Özbay, Ekmel (Wiley-VCH Verlag, 2015)
      In this work, we present an investigation of the optical properties and band structure calculations for the photonic crystal structures (PCs) based on one-dimensional (1D) photonic crystal. Here we use 1D A5B6C7(A:Sb; ...

    • Band Structure and Optical Properties of Kesterite Type Compounds: First principle calculations 

      Palaz S.; Unver H.; Ugur G.; Mamedov, Amirullah; Özbay, Ekmel (Institute of Physics Publishing, 2017)
      In present work, our research is mainly focused on the electronic structures, optical and magnetic properties of Cu2FeSnZ4 (Z = S, Se) compounds by using ab initio calculations within the generalized gradient approximation ...

    • Band-dropping via coupled photonic crystal waveguides 

      Bayındır, Mehmet; Özbay, Ekmel (Optical Society of American (OSA), 2002)
      We observe the dropping of electromagnetic waves having a specific frequency or a certain frequency band in two-dimensional dielectric photonic crystals. The single frequency is dropped via cavity-waveguide coupling. ...

    • Characterization and stability of Janus TiXY (X/Y = S, Se, and Te) monolayers 

      Moğulkoç, A.; Moğulkoç, Y.; Jahangirov, Seymur; Durgun, Engin (American Chemical Society, 2019)
      The realization of Janus MoSSe monolayers has brought two-dimensional (2D), ternary transition metal dichalcogenides (TMDs) into focus. The addition of a third element can lead to superior properties, hence extensive ...

    • Chiral single-wall gold nanotubes 

      Senger, R. T.; Dag, S.; Çıracı, Salim (American Physical Society, 2004)
      The formation of freestanding and tip-suspended chiral-wall (n,m) nanotubes, which were composed of helical atomic strands, from gold atoms was investigated using first-principles calculations, where (n,m) notation defines ...

    • Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys 

      Westmeyer, A. N.; Mahajan, S.; Bajaj, K. K.; Lin J. Y.; Jiang, H. X.; Koleske, D. D.; Senger, R. T. (American Institute of PhysicsA I P Publishing LLC, 2006)
      We report the determination of the energy-band offsets between GaN and AlN using the linewidth (full width at half maximum) of an extremely sharp excitonic luminescence transition in Alx Ga1-x N alloy with x=0.18 at 10 K. ...

    • Electron initiated impact ionization in AlGaN alloys 

      Bulutay, C. (Institute of Physics, 2002)
      Detailed impact ionization (II) analysis of electrons is presented for AlGaN alloys as a vital resource for solar-blind avalanche photodiode and high power transistor applications. Necessary ingredients for the II ...

    • Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier 

      Ji Y.; Zhang, Z. -H.; Tan S.T.; Ju, Z. G.; Kyaw, Z.; Hasanov N.; Liu W.; Sun X. W.; Demir, Hilmi Volkan (Optical Society of America, 2013)
      We study hole transport behavior of InGaN/GaN light-emitting diodes with the dual wavelength emission method. It is found that at low injection levels, light emission is mainly from quantum wells near p-GaN, indicating ...

    • Functionalized carbon nanotubes and device applications 

      Çıracı, Salim; Dağ, Sefa; Yıldırım, T.; Gülseren, Oğuz; Senger, Ramazan Tuğrul (IOP, 2004)
      Carbon nanotubes, in which the two-dimensional hexagonal lattice of graphene is transformed into a quasi-one-dimensional lattice by conserving the local bond arrangement, provide several structural parameters for engineering ...

    • Incommensurate phase transition and electronic properties of BaMnF4 

      Palaz, S.; Şimşek, Ş.; Koç, H.; Babayeva, R.; Mamedov, Amirullah M.; Özbay, Ekmel (IOP, 2019)
      We present the ab initio study the electronic, mechanical and structural properties of BaMnF4. We duscuss the trends in the electronic and mechanical properties of BaMnF4 under pressure up to 80 GPa. BaMnF4 belongs to ...

    • Low-temperature photoluminescence spectra of layered semiconductor TlGaS2 

      Gasanly, N. M.; Aydınlı, Atilla; Bek, A.; Yilmaz, I. (Pergamon Press, 1998)
      Photoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, ...

    • Low-temperature photoluminescence spectra of TlInxGa1-xS2 layer mixed crystals 

      Allakhverdiev, K. R.; Gasanly, N. M.; Aydınlı, Atilla (Pergamon Press, 1995)
      Low-temperature photoluminescence spectra of TlInS2, TlIn0.95Ga0.05S2 and TlIn0.8Ga0.2S2 layer crystals were studied in the temperature range 14-220 K. The temperature dependencies of bands 2.374 eV (A), 2.570 eV (E) and ...

    • Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal 

      Gasanly, N. M.; Serpengüzel, A.; Aydınlı, A.; Baten, S. M. A. (Elsevier Science Publishers B.V., Amsterdam, Netherlands, 2000)
      The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature. 0.2-15.2 W cm-2 excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has ...

    • Novel metallic clathrates of group-IV elements and their compounds in a dense hexagonal lattice 

      Görkan, T.; Özdemir, İ.; Bakır, M. Y.; Ersan, F.; Gökoğlu, G.; Aktürk, E.; Çıracı, Salim (American Chemical Society, 2019)
      Further, to recently introduced metallic NaSi6 and Si6 clathrate structures, we show that not only Si but also other group-IV elements, such as C, Ge, and Sn, can form stable and metallic clathrate structures with open ...

    • One and two dimensional LiNbO3 photonic crystals 

      Şimşek, Şevket; Mamedov, Amirullah M.; Özbay, Ekmel (IEEE, 2013)
      In this report, we present an investigation of the optical properties and band structure calculations for the photonic crystal structures (PCs) based on one-dimensional (1D) and two-dimensional (2D) ferroelectric LiNbO3 ...

    • Optical, electronic, and elastic properties of some A5B6C7 ferroelectrics (A=Sb, Bi; B=S, Se; C=I, Br, Cl): first principle calculation 

      Koc, H.; Palaz S.; Mamedov, A. M.; Özbay, Ekmel (Taylor and Francis Inc., 2017)
      In present paper, we focus on the structural, mechanical, electronic, and optical properties for the A5B6C7(A = Sb, Bi; B = Te, Se; S; C = I, Br, Cl) compounds using the density functional methods in generalized gradient ...

    • Pseudopotential-based full zone k · p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC 

      Bulutay, Ceyhun (TÜBİTAK, 2006)
      The k · p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. ...

    • Quantum transport through one-dimensional aluminum wires 

      Batra, I. P.; Sen, P.; Çıracı, Salim (American Vacuum Society, 2002)
      Quantum conductance in narrow channels has been well understood by using the two-dimensional electron gas, a model system which has been realized in semiconductor heterojunctions. An essential property of this electron ...