Browsing by Keywords "B1. Silicon substrates"

Now showing items 1-2 of 2

The effect of Si(x)N(y) interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD

Arslan, E.; Ozturk, M. K.; Ozcelik, S.; Özbay, Ekmel (ELSEVIER, 2008-04-27)

In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(111) substrates by metal-organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown ...
The electrical, optical, and structural properties of GaN epitaxial layers grown on Si(111) substrate with SiNx interlayers

Arslan, E.; Duygulu, Ö.; Kaya, A. A.; Teke, A.; Özçelik, S.; Özbay, Ekmel (ELSEVIER, 2009-10-12)

The effect of the in situ substrate nitridation time on the electrical, structural and optical properties of GaN films grown on Si(111) substrates by metal organic chemical vapor deposition (MOCVD) was investigated. A thin ...