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    • MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35 

      Yu, H.; Ulker, E.; Özbay, Ekmel (Elsevier BV * North-Holland, 2006-04-01)
      We present a study on the high performance p-type AlxGa1-xN (x = 0.35) layers grown by low-pressure metalorganic chemical vapor deposition on AIN template/sapphire substrate. The influence of growth conditions on the p-type ...