Browsing by Keywords "B1. Gan"
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The effect of Si(x)N(y) interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD (ELSEVIER, 2008-04-27)In the present paper, the effects of nitridation on the quality of GaN epitaxial films grown on Si(111) substrates by metal-organic chemical vapor phase deposition (MOCVD) are discussed. A series of GaN layers were grown ...