Browsing by Keywords "Atomic Layer Deposition"
Now showing items 1-6 of 6
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Ald grown zno as an alternative material for plasmonic and uncooled infrared imaging applications
(Bilkent University, 2014)Plasmonics is touted as a milestone in optoelectronics as this technology can form a bridge between electronics and photonics, enabling the integration of electronics and photonic circuits at the nanoscale. Noble metals ... -
Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer
(AIP Publishing, 2014)A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage Vt shift (4 V) at low operating voltage (6/-6 V), good retention ... -
Low temperature thin films transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
(AIP Publishing LLC, 2014)We report GaN thin film transistors (TFT) with a thermal budget below 250 °C. GaN thin films are grown at 200 °C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found ... -
Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma
(Wiley-Blackwell Publishing, Inc., 2014)Hexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N 2 /H 2 plasma in a hollow-cathode plasma- assisted atomic layer deposition ... -
Surface engineered angstrom thick ZnO-sheathed TiO2 nanowires as photoanodes for performance enhanced dye-sensitized solar cells
(Royal Society of Chemistry, 2014)This paper presents a systematic study on the effects of angstrom-thick atomic layer deposited (ALD) ZnO sheaths on hydrothermally-grown TiO2 nanowires (NWs) used as photoanodes in dye-sensitized solar cells (DSSCs). We ... -
TiO2 thin film transistor by atomic layer deposition
(SPIE, 2013)In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film ...
