Browsing by Keywords "Annealing temperatures"
Now showing items 1-8 of 8
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Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(A I P Publishing LLC, 2008)Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ... -
Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors
(Elsevier, 2013)This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, ... -
Examination of the temperature related structural defects of InGaN/GaN solar cells
(Academic Press, 2015)In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution ... -
Matrix density effect on morphology of germanium nanocrystals embedded in silicon dioxide thin films
(Materials Research Society, 2011)Flash type electronic memories are the preferred format in code storage at complex programs running on fast processors and larger media files in portable electronics due to fast write/read operations, long rewrite life, ... -
Postdeposition annealing on RF-sputtered SrTiO3 thin films
(AVS Science and Technology Society, 2017)Understanding of structural, optical, and electrical properties of thin films are very important for a reliable device performance. In the present work, the effect of postdeposition annealing on stoichiometric SrTiO3 (STO) ... -
Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers
(Wiley, 2007)Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ... -
Spectroscopic ellipsometric study of Ge nanocrystals embedded in SiO 2 using parametric models
(Wiley - V C H Verlag GmbH & Co. KGaA, 2008)Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured ... -
Synthesis of mesoporous lithium titanate thin films and monoliths as an anode material for high-rate lithium-ion batteries
(Wiley-VCH Verlag, 2016)Mesoporous Li4Ti5O12 (LTO) thin film is an important anode material for lithium-ion batteries (LIBs). Mesoporous films could be prepared by self-assembly processes. A molten-salt-assisted self-assembly (MASA) process is ...
