Browsing by Keywords "Annealing cycles"
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Selective-area high-quality germanium growth for monolithic integrated optoelectronics
(Institute of Electrical and Electronics Engineers, 2012-03-02)Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth ...