Browsing by Keywords "Annealing"
Now showing items 1-20 of 21
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Air-stable n-channel diketopyrrolopyrrole-diketopyrrolopyrrole oligomers for high performance ambipolar organic transistors
(American Chemical Society, 2016)n-channel organic semiconductors are prone to oxidation upon exposed to ambient conditions. Herein, we report design and synthesis of diketopyrrolopyrrole (DPP)-based oligomers for ambipolar organic thin-film transistors ... -
Atomistic structure simulation of silicon nanocrystals driven with suboxide penalty energies
(American Scientific Publishers, 2008)The structural control of silicon nanocrystals embedded in amorphous oxide is currently an important technological problem. In this work, an approach is presented to simulate the structural behavior of silicon nanocrystals ... -
Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories
(AIP Publishing, 2008-02)Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents ... -
Effect of processing options on ultra-low-loss lead-magnesium-niobium titanate thin films for high density capacitors
(Elsevier, 2013)This work studies the impact of annealing temperatures on PMNT (lead-magnesium niobate-lead titanate, Pb(Mg0.33Nb 0.67)0.65Ti0.35O3) thin films grown on a silicon substrate. The electrical properties of the thin films, ... -
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014)In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed ... -
Examination of the temperature related structural defects of InGaN/GaN solar cells
(Academic Press, 2015)In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution ... -
Examining the annealing schedules for RNA design algorithm
(IEEE, 2016-07)RNA structures are important for many biological processes in the cell. One important function of RNA are as catalytic elements. Ribozymes are RNA sequences that fold to form active structures that catalyze important ... -
Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films
(Elsevier, 2006)Formation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration ... -
Growth and characterization of nanocrystalline SrTiOx films: room temperature deposition using RF sputtering system in a pure argon environment
(Institute of Physics Publishing, 2017-05)We report a comprehensive description of the structure, optical and electrical properties of asdeposited and annealed SrTiOx (STO) thin films. Nanocrystalline STO films were deposited on p-type Si (1 0 0) and UV-grade fused ... -
Infrared luminescence of annealed germanosilicate layers
(Elsevier, 2014-03)In the light of growing importance of semiconductor nanocrystals for photonics, we report on the growth and characterization of annealed germanosilicate layers used for Ge nanocrystal formation. The films are grown using ... -
Low temperature growth, characterization and applications of rf-sputtered SrTiO3 and BaSrTiO3 thin films
(Bilkent University, 2016-03)Among the several perovskite ferroelectric oxides, SrTiO3 (STO) and BaSrTiO3 (BST) thin lms have attracted signi cant attention due to their potential applications in oxide-based electronics. However, reliability and ... -
Microstructural characterization of medical-grade stainless steel powders prepared by mechanical alloying and subsequent annealing
(Elsevier, 2013)The harmful effect of nickel ions released from conventional stainless steel implants has provided a high level of motivation for the further development of nickel-free stainless steels. In this paper, the microstructure ... -
Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
(AVS Science and Technology Society, 2014)Gallium nitride (GaN), aluminum nitride (AlN), and AlxGa 1-xN films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film ... -
Postdeposition annealing on RF-sputtered SrTiO3 thin films
(AVS Science and Technology Society, 2017)Understanding of structural, optical, and electrical properties of thin films are very important for a reliable device performance. In the present work, the effect of postdeposition annealing on stoichiometric SrTiO3 (STO) ... -
Raman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:H
(Pergamon Press, 1994)We have used Raman scattering to follow the progress of multiple-pulse (sub-melt-threshold) laser annealing in doped hydrogenated amorphous silicon films (a-Si:H) on glass. In phosphorous-doped a-Si:H the Raman signal shows ... -
Structural and loss characterization of SiON layers for optical waveguide applications
(IEEE, 2000)Silicon oxynitride films for optical waveguide applications were grown at 350°C in a PECVD reactor. ATR-FTIR spectroscopy was used to identify the bond structure and absorption characteristics in the mid-infrared region. ... -
Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing
(Elsevier BV * North-Holland, 2017)Among perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the ... -
Surface ionic states and structure of titanate nanotubes
(Royal Society of Chemistry, 2015)Here we present an investigation on Zn-Ti-O ternary (zinc titanate) nanostructures which were prepared by a combination of electrospinning and atomic layer deposition. Depending on the ZnO and TiO2 molar ratio, two titanates ... -
Visible photoluminescence from low temperature deposited hydrogenated amorphous silicon nitride
(Pergamon Press, 1996)Hydrogenated amorphous silicon nitride (a-SiNx:H) samples have been prepared by plasma enhanced chemical vapor deposition (PECVD) using a mixture of silane (SiH4), nitrogen and ammonia (NH3). Most films exhibit visible ... -
Visible photoluminescence from SiOx films grown by low temperature plasma enhanced chemical vapor deposition
(Pergamon Press, 1995)a-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows ...
