Browsing by Keywords "Amorphous films"
Now showing items 1-7 of 7
-
Bias in bonding behavior among boron, carbon, and nitrogen atoms in ion implanted a-BN, a-BC, and diamond like carbon films
(2011)In this study, we implanted Nþ and Nþ 2 ions into sputter deposited amorphous boron carbide (a-BC) and diamond like carbon (DLC) thin films in an effort to understand the chemical bonding involved and investigate possible ... -
Germanium for high performance MOSFETs and optical interconnects
(2008-10)It is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently ... -
Postdeposition annealing on RF-sputtered SrTiO3 thin films
(AVS Science and Technology Society, 2017)Understanding of structural, optical, and electrical properties of thin films are very important for a reliable device performance. In the present work, the effect of postdeposition annealing on stoichiometric SrTiO3 (STO) ... -
Raman studies of doped polycrystalline silicon from laser-annealed, doped a-Si:H
(Pergamon Press, 1994)We have used Raman scattering to follow the progress of multiple-pulse (sub-melt-threshold) laser annealing in doped hydrogenated amorphous silicon films (a-Si:H) on glass. In phosphorous-doped a-Si:H the Raman signal shows ... -
Strong enhancement of spontaneous emission in amorphous-silicon-nitride photonic crystal based coupled-microcavity structures
(Wiley, 2001)We investigated photoluminescence (PL) from one-dimensional photonic band gap structures. The photonic crystals, a Fabry-Perot (FP) resonator and a coupled-microcavity (CMC) structure, were fabricated by using alternating ... -
Structural, optical and electrical characteristics BaSrTiOx thin films: Effect of deposition pressure and annealing
(Elsevier BV * North-Holland, 2017)Among perovskite oxide materials, BaSrTiOx (BST) has attracted great attention due to its potential applications in oxide-based electronics. However, reliability and efficiency of BST thin films strongly depend on the ... -
TiO2 thin film transistor by atomic layer deposition
(SPIE, 2013)In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film ...
