Browsing by Keywords "Aluminum compounds"
Now showing items 1-7 of 7
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Area-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: A case study for metal oxides
(American Chemical Society, 2016)Area-selective atomic layer deposition (AS-ALD) has attracted immense attention in recent years for self-aligned accurate pattern placement with subnanometer thickness control. Here, we demonstrate a methodology to achieve ... -
Experimental evaluation of impact ionization coefficients in Al xGa1-xN based avalanche photodiodes
(AIP Publishing LLC, 2006)The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization ... -
Gain and temporal response of AlGaN solar-blind avalanche photodiodes: An ensemble Monte Carlo analysis
(A I P Publishing LLC, 2003)A study was performed on temporal and gain response of AlGaN solar-blind avalanche photodiodes (APD). The ensemble Monte Carlo method was used for the purpose. It was found that without any fitting parameters, reasonable ... -
High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current
(Pergamon Press, 2005-01)Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized ... -
High-speed characterization of solar-blind AlxGa 1-xN p-i-n photodiodes
(Institute of Physics, 2004)We report on the temporal pulse response measurements of solar-blind AlxGa1-xN-based heterojunction p-i-n photodiodes. High-speed characterization of the fabricated photodiodes was carried out at 267 nm. The bandwidth ... -
High-speed solar-blind AlGaN Schottky photodiodes
(Cambridge University Press, 2003)We report high-speed solar-blind AlGaN-based Schottky photodiodes. AlGaN/GaN heterostructure device layers were grown on sapphire substrate. The devices were fabricated on AlGaN/GaN heterostructuresusing a microwave ... -
Lateral and vertical heterostructures of h-GaN/h-AlN: electron confinement, band lineup, and quantum structures
(American Chemical Society, 2017-11)Lateral and vertical heterostructures constructed of two-dimensional (2D) single-layer h-GaN and h-AlN display novel electronic and optical properties and diverse quantum structures to be utilized in 2D device applications. ...
