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    • Surface morphology of Al0.3Ga0.7N/Al2O3-high electron mobility transistor structure 

      Çörekçi, S.; Usanmaz, D.; Tekeli, Z.; Özçelik, S.; Özbay, Ekmel (American Scientific Publishers, 2008-02)
      We present surface properties of buffer films (AlN and GaN) and Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AlN interlayer grown on High Temperature (HT)-AlN buffer/Al2O3 substrate ...