Browsing by Keywords "Active Regions"

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Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

Ju, Z. G.; Liu, W.; Zhang, Z. H.; Tan, S. T.; Ji, Y.; Kyaw, Z. B.; Zhang, X. L.; Lu, S. P.; Zhang, Y. P.; Zhu, B.; Hasanov, N.; Sun, X. W.; Demir, H. V. (AIP Publishing, 2013)

InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases ...
Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

Ji Y.; Zhang Z.-H.; Kyaw, Z.; Tan S.T.; Ju, Z. G.; Zhang, X. L.; Liu W.; Sun, X. W.; Demir, H. V. (AIP Publishing, 2013-08-01)

The effect of n-AlGaN versus p-AlGaN electron-blocking layers (EBLs) on the performance of InGaN/GaN light-emitting diodes is studied in this work. Experimental results suggest that the n-type EBL leads to higher optical ...