Now showing items 1-4 of 4

    • Low temperature photoluminescence spectra of InS single crystals 

      Gasanly, N. M.; Aydinli, A. (Elsevier, 1997-03)
      Photoluminescence (PL) spectra of InS were investigated in the wavelength region 477.5–860 nm and in the temperature range 8.5–293 K. We observed three PL bands centered at 605 nm (A-band), 626 nm (B-band) and 820 nm ...
    • Low-temperature photoluminescence spectra of layered semiconductor TlGaS2 

      Gasanly, N. M.; Aydinli, A.; Bek, A.; Yilmaz, I. (Pergamon Press, 1998)
      Photoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, ...
    • Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals 

      Aydnl, A.; Gasanly, N. M.; Gökşen, K. (Elsevier Science, 2001)
      Photoluminescence (PL) spectra of GaS0.5Se0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm ...
    • Trap levels in layered semiconductor Ga2SeS 

      Aydinli, A.; Gasanly, N. M.; Aytekin, S. (Elsevier, 2004)
      Trap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in ...