Browsing by Keywords "2DEG"
Now showing items 1-6 of 6
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Analysis of defect related optical transitions in biased AlGaN/GaN heterostructures
(2010)The optical transitions in AlGaN/GaN heterostructures that are grown by metalorganic chemical vapor deposition (MOCVD) have been investigated in detail by using Hall and room temperature (RT) photoluminescence (PL) ... -
Effect of various pseudomorphic AIN layer insertions on the electron densities of two-dimensional electron gas in lattice-matched In0.18AI0.82N/GaN based heterostructures
(Institutul National de Cercetare-Dezvoltare pentru Optoelectronica, 2009)We explored the effects of various pseudomorphic AlN layer insertions in lattice-matched In0.18Al0.82N/GaN based heterostructures on band structures and carrier densities with the help of one-dimensional self-consistent ... -
Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)
(Institutul National de Cercetare-Dezvoltare pentru Optoelectronica, 2009-05)We explored the effects of the Al-mole fraction (x) of AlxGa1-xN barrier layers and the thickness of some layers on carrier densities and electron probability densities in normally-on AlGaN-GaN double-channel high electron ... -
Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers
(ELSEVIER, 2011-02-01)The effects of the In-mole fraction (x) of an InxGa 1-xN back barrier layer and the thicknesses of different layers in pseudomorphic AlyGa1-yN/AlN/GaN/InxGa 1-xN/GaN heterostructures on band structures and carrier densities ... -
Strain calculations from hall measurements in undoped Al 0.25Ga0.75N/GaN HEMT structures
(American Institute of Physics, 2007)The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, ... -
Well parameters of two-dimensional electron gas in Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by MOCVD
(Wiley, 2009-12-01)Resistivity and Hall effect measurements were carried out as a function of magnetic field (0-1.5 T) and temperature (30-300 K) for Al0.88In 0.12N/AlN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition ...
