Now showing items 1-6 of 6

    • Effect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodes 

      Zhu, B.; Zhang, Z.; Tan, S. T.; Lu, S.; Zhang, Y.; Kang, X.; Wang, N.; Hasanov, N.; Demir, Hilmi Volkan (Elsevier B. V., 2018-04)
      In this work, we report how the Mg doping in the barriers affects the electrical performance of InGaN/GaN-based light-emitting diodes. When compared with the reference device that does not have Mg doped quantum barriers, ...
    • A hole accelerator for InGaN/GaN light-emitting diodes 

      Zhang, Z. H.; Liu, W.; Tan, S. T.; Ji, Y.; Wang, L.; Zhu, B.; Zhang, Y.; Lu, S.; Zhang, X.; Hasanov, N.; Sun, X. W.; Demir, Hilmi Volkan (AIP Publishing, 2014)
      The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low ...
    • Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers 

      Ju, Z. G.; Liu, W.; Zhang, Z. H.; Tan, S. T.; Ji, Y.; Kyaw, Z. B.; Zhang, X. L.; Lu, S. P.; Zhang, Y. P.; Zhu, B.; Hasanov, N.; Sun, X. W.; Demir, Hilmi Volkan (AIP Publishing, 2013)
      InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases ...
    • Low thermal-mass LEDs: Size effect and limits 

      Lu, S.; Liu W.; Zhang, Z.-H.; Tan, S.T.; Ju, Z.; Ji, Y.; Zhang X.; Zhang, Y.; Zhu, B.; Kyaw, Z.; Hasanov, N.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2014)
      In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ...
    • On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes 

      Kyaw, Z.; Zhang, Z. H.; Liu, W.; Tan, S. T.; Ju, Z. G.; Zhang, X. L.; Ji, Y.; Hasanov, N.; Zhu, B.; Lu, S.; Zhang, Y.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2014-01-07)
      N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN ...
    • On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes 

      Zhang, Z. H.; W. L.; Tan, S. T.; Ju, Z.; Ji, Y.; Kyaw, Z.; Zhang, X.; Hasanov, N.; Zhu, B.; Lu, S.; Zhang, Y.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2014)
      Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...