Browsing by Author "Zhao, Y."

808 nm broad-area laser diodes designed for high efficiency at high-temperature operation

Lan, Y.; Yang, G.; Liu, Y.; Zhao, Y.; Wang, Z.; Li, T.; Demir, Abdullah (Institute of Physics Publishing Ltd., 2021-09-21)

Semiconductor lasers with high power conversion efficiency (PCE) and output power are heavily investigated driven by more energy-efficient commercial applications. In this paper, an asymmetric broad area laser (A-BAL) ...

AC-driven, color-and brightness-tunable organic light-emitting diodes constructed from an electron only device

Zhao, Y.; Chen, R.; Gao, Y.; Leck, K.S.; Yang X.; Liu, S.; Abiyasa, A.P.; Divayana, Y.; Mutlugun, E.; Tan, S.T.; Sun H.; Demir, Hilmi Volkan; Sun X.W. (2013)

In this paper, a color- and brightness-tunable organic light-emitting diode (OLED) is reported. This OLED was realized by inserting a charge generation layer into an electron only device to form an n-i-p-i-n structure. It ...

Anisotropic stimulated emission from aligned CdSe/CdS dot-in-rods

Gao, Y.; Ta, V. D.; Zhao, X.; Wang, Y.; Chen, R.; Zhao, Y.; Dang, C.; Sun, X.; Sun, H.; Demir, Hilmi Volkan (IEEE, 2014-10)

Anisotropic optical properties of CdSe/CdS dot-in-rods loaded in a capillary tube are demonstrated, suggesting nanorods' alignment with a microfluidic approach. Polarized emissions from photoluminescence and whispering ...

High efficiency 1.9 Kw single diode laser bar epitaxially stacked with a tunnel junction

Zhao, Y.; Wang, Z.; Demir, Abdullah; Yang, G.; Ma, S.; Xu, B.; Sun, C.; Li, B.; Qiu, B. (IEEE, 2021-04-21)

We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to ...

High-power operation and lateral divergence angle reduction of broad-area laser diodes at 976 nm

Liu, Y.; Yang, G.; Wang, Z.; Li, T.; Tang, S.; Zhao, Y.; Lan, Y.; Demir, Abdullah (Elsevier, 2021-04-28)

Broad-area diode lasers with high output power and low lateral divergence angle are highly desired for extensive scientific and industrial applications. Here, we report on the epitaxial design for higher output power and ...

Highly flexible, full-color, top-emitting quantum dot light-emitting diode tapes

Yang X.; Mutlugün, Evren; Gao, Y.; Zhao, Y.; Tan, S.T.; Sun X.W.; Demir, Hilmi Volkan (IEEE, 2013)

We report flexible tapes of high-performance, top-emitting, quantum dot based, light-emitting diodes (QLEDs) with multicolor emission, actively working even when flexed. The resulting QLED tapes reach a high peak luminance ...

Low-cost, large-scale, ordered ZnO nanopillar arrays for light extraction efficiency enhancement in quantum dot light-emitting diodes

Yang, X.; Dev, K.; Wang, J.; Mutlugün, E.; Dang, C.; Zhao, Y.; Tan, S. T.; Sun, X. W.; Demir, Hilmi Volkan (IEEE, 2014)

We report a QLED with enhanced light outcoupling efficiency by applying a layer of periodic ZnO nanopillar arrays. The resulting QLED reaches the record external quantum efficiency (EQE) of 9.34% in green-emitting QLEDs ...

Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes

Yang, X.; Mutlugun, E.; Zhao, Y.; Gao, Y.; Leck, K. S.; Ma, Y.; Ke, L.; Tan, S. T.; Demir, Hilmi Volkan; Sun, X. W. (Wiley-VCH Verlag, 2014)

A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the ...