Now showing items 1-7 of 7

    • Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer 

      Zhang, Z.-H.; Tan, S.T.; Liu W.; Ju, Z.; Zheng, K.; Kyaw, Z.; Ji, Y.; Hasanov, N.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)
      This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ...
    • Low thermal-mass LEDs: Size effect and limits 

      Lu, S.; Liu W.; Zhang, Z.-H.; Tan, S.T.; Ju, Z.; Ji, Y.; Zhang X.; Zhang, Y.; Zhu, B.; Kyaw, Z.; Hasanov, N.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2014)
      In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ...
    • Nonradiative recombination-Critical in choosing quantum well number for InGaN/GaN light-emitting diodes 

      Zhang, Y.P.; Zhang, Z.-H.; Liu W.; Tan, S.T.; Ju, Z.G.; Zhang X.L.; Ji, Y.; Wang L.C.; Kyaw, Z.; Hasanov, N.; Zhu, B.B.; Lu, S.P.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2015)
      In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ...
    • P-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas 

      Zhang, Z.-H.; Tiam Tan, S.; Kyaw, Z.; Liu W.; Ji, Y.; Ju, Z.; Zhang X.; Wei Sun X.; Volkan Demir H. (2013)
      Here, GaN/AlxGa1-xN heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional ...
    • A PN-type quantum barrier for InGaN/GaN light emitting diodes 

      Zhang, Z.-H.; Tan, S.T.; Ji, Y.; Liu W.; Ju, Z.; Kyaw, Z.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)
      In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the ...
    • Room-temperature larger-scale highly ordered nanorod imprints of ZnO film 

      Kyaw, Z.; Wang J.; Dev, K.; Tiam Tan, S.; Ju, Z.; Zhang, Z.-H.; Ji, Y.; Hasanov, N.; Liu W.; Sun X.W.; Demir, Hilmi Volkan (Optical Society of American (OSA), 2013)
      Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a ...
    • Strain-reduced micro-LEDs grown directly using partitioned growth 

      Lu, S.; Zhang, Y.; Zhang, Z.-H.; Tsai, P. C.; Zhang, X.; Zhang, S. T.; Demir, Hilmi Volkan (Frontiers Media S.A., 2021-03-10)
      Strain-reduced micro-LEDs in 50 μm × 50 μm, 100 μm × 100 μm, 200 μm × 200 μm, 500 μm × 500 μm, and 1,000 μm × 1,000 μm sizes were grown on a patterned c-plane sapphire substrate using partitioned growth with the metal-organic ...