Now showing items 1-4 of 4

    • AlGaN/GaN-Based laterally gated high-electron-mobility transistors with optimized linearity 

      Odabaşı, Oğuz; Yılmaz, Doğan; Aras, Erdem; Asan, Kübra Elif; Zafar, Salahuddin; Çankaya Akoğlu, Büşra; Bütün, Bayram; Özbay, Ekmel (IEEE, 2021-02-01)
      In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated ...
    • Eighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applications 

      Hayat, K.; Zafar, Salahuddin; Mehmood, T.; Akoğlu, Büşra Çankaya; Özbay, Ekmel (The Institution of Engineering and Technology, 2021-11)
      This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an ...
    • GaN based LNA MMICs for X-band applications 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Öztürk, Mustafa; Çankaya, Büşra; Yılmaz, Doğan; Kashif, A. U.; Özbay, Ekmel (Institute of Electrical and Electronics Engineers, 2020)
      In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ...
    • GaN-on-SiC LNA for UHF and L-Band 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Çankaya, Büşra; Kashif, A.; Özbay, Ekmel (IEEE, 2019)
      In this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA ...