Now showing items 1-10 of 10

    • AlGaN/GaN-Based laterally gated high-electron-mobility transistors with optimized linearity 

      Odabaşı, Oğuz; Yılmaz, Doğan; Aras, Erdem; Asan, Kübra Elif; Zafar, Salahuddin; Çankaya Akoğlu, Büşra; Bütün, Bayram; Özbay, Ekmel (IEEE, 2021-02-01)
      In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated ...
    • Analysis of HfO2 and ZrO2 as high-K dielectric for CMOS nano devices 

      Hasan, T.; Zafar, Salahuddin; Özbay, Ekmel; Kashif, A. U. (Institute of Electrical and Electronics Engineers, 2022-05-16)
      An analysis has been made on high-K dielectrics (HfO 2 and ZrO 2) for the CMOS process up to 14 nm FAB technology node. The aim is to study the reduction in gate leakage current for Nano-scale devices. High-K Dielectric ...
    • Design and development of X-band GaN-based low-noise amplifiers 

      Zafar, Salahuddin (Bilkent University, 2022-12)
      Gallium nitride (GaN) high electron mobility transistor (HEMT) technology emerged as a preferable candidate for high-power applications. GaN HEMTs on silicon carbide (SiC) substrate provide the best combination of speed ...
    • Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications 

      Zafar, Salahuddin; Çankaya Akoğlu, Büşra; Aras, Erdem; Yılmaz, Doğan; Nawaz, Muhammad İmran; Kashif, Ahsanullah; Özbay, Ekmel (John Wiley & Sons Ltd., 2022-07)
      In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN ...
    • Design of GaN-based X-band LNAs to achieve sub-1.2 dB noise figure 

      Zafar, Salahuddin; Aras, Erdem; Cankaya Akoglu, Busra; Tendurus, Gizem; Nawaz, Muhammad Imran; Kashif, Ahsanullah; Ozbay, Ekmel (Wiley, 2022-08-21)
      GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band ...
    • Eighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applications 

      Hayat, K.; Zafar, Salahuddin; Mehmood, T.; Akoğlu, Büşra Çankaya; Özbay, Ekmel (The Institution of Engineering and Technology, 2021-11)
      This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an ...
    • GaN based LNA MMICs for X-band applications 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Öztürk, Mustafa; Çankaya, Büşra; Yılmaz, Doğan; Kashif, A. U.; Özbay, Ekmel (Institute of Electrical and Electronics Engineers, 2020)
      In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ...
    • GaN-on-SiC LNA for UHF and L-Band 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Çankaya, Büşra; Kashif, A.; Özbay, Ekmel (IEEE, 2019)
      In this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA ...
    • Unveiling Tmax inside GaN HEMT based X-band low-noise amplifier by correlating thermal simulations and IR thermographic measurements 

      Zafar, Salahuddin; Durna, Yılmaz; Koçer, Hasan; Akoğlu, Büşra Çankaya; Aras, Yunus Erdem; Odabaşı, Oğuz; Bütün, Bayram; Özbay, Ekmel (IEEE, 2022-12-20)
      This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a ...
    • X-band cascode LNA with bias-invariant noise figure using 0.15 µm GaN-on-SiC technology 

      Nawaz, Muhammad Imran; Aras, Yunus Erdem; Zafar, Salahuddin; Akoğlu, Büşra Çankaya; Tendürüs, Gizem; Özbay, Ekmel (IEEE, 2022-07-18)
      Cascode HEMTs exhibit better stability and broad bandwidths performance as compared with common source HEMTs. This paper presents the design of a single stage broadband low noise amplifier based upon 0.15 um GaN HEMT ...