Browsing by Author "Zafar, Salahuddin"
Now showing items 1-10 of 10
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AlGaN/GaN-Based laterally gated high-electron-mobility transistors with optimized linearity
(IEEE, 2021-02-01)In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated ... -
Analysis of HfO2 and ZrO2 as high-K dielectric for CMOS nano devices
(Institute of Electrical and Electronics Engineers, 2022-05-16)An analysis has been made on high-K dielectrics (HfO 2 and ZrO 2) for the CMOS process up to 14 nm FAB technology node. The aim is to study the reduction in gate leakage current for Nano-scale devices. High-K Dielectric ... -
Design and development of X-band GaN-based low-noise amplifiers
(Bilkent University, 2022-12)Gallium nitride (GaN) high electron mobility transistor (HEMT) technology emerged as a preferable candidate for high-power applications. GaN HEMTs on silicon carbide (SiC) substrate provide the best combination of speed ... -
Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications
(John Wiley & Sons Ltd., 2022-07)In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN ... -
Design of GaN-based X-band LNAs to achieve sub-1.2 dB noise figure
(Wiley, 2022-08-21)GaAs and SiGe technologies take an edge over GaN-based devices in terms of better noise figure (NF). In this article, we present HEMT topologies and design techniques to achieve a sub-1.2 dB NF for a GaN-based X-band ... -
Eighty nine-watt cascaded multistage power amplifier using gallium nitride-on-silicon high electron mobility transistor for L-band radar applications
(The Institution of Engineering and Technology, 2021-11)This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class-AB for L-band radar applications. The purpose of this endeavour is to develop an ... -
GaN based LNA MMICs for X-band applications
(Institute of Electrical and Electronics Engineers, 2020)In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ... -
GaN-on-SiC LNA for UHF and L-Band
(IEEE, 2019)In this paper, we report a broadband GaN HEMT LNA from 100 MHz to 2 GHz, using common source with inductive degeneration and RC feedback topology. Flat gain response of ±1.5 dB variation for 9 V drain voltage with 108 mA ... -
Unveiling Tmax inside GaN HEMT based X-band low-noise amplifier by correlating thermal simulations and IR thermographic measurements
(IEEE, 2022-12-20)This paper presents a method to reveal the channel temperature profile of high electron mobility transistors (HEMTs) in a multi-stage monolithic microwave integrated circuit (MMIC). The device used for this study is a ... -
X-band cascode LNA with bias-invariant noise figure using 0.15 µm GaN-on-SiC technology
(IEEE, 2022-07-18)Cascode HEMTs exhibit better stability and broad bandwidths performance as compared with common source HEMTs. This paper presents the design of a single stage broadband low noise amplifier based upon 0.15 um GaN HEMT ...
