Now showing items 1-4 of 4

    • AlGaN/GaN-Based laterally gated high-electron-mobility transistors with optimized linearity 

      Odabaşı, Oğuz; Yılmaz, Doğan; Aras, Erdem; Asan, Kübra Elif; Zafar, Salahuddin; Çankaya Akoğlu, Büşra; Bütün, Bayram; Özbay, Ekmel (IEEE, 2021-02-01)
      In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated ...
    • Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs 

      Toprak, Ahmet; Osmanoǧlu, Sinan; Öztürk, Mustafa; Yılmaz, Doğan; Cengiz, Ö.; Şen, Ö.; Bütün, Bayram; Özcan, Ş.; Özbay, Ekmel (Institute of Physics Publishing, 2018)
      This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, ...
    • GaN based LNA MMICs for X-band applications 

      Zafar, Salahuddin; Osmanoğlu, Sinan; Öztürk, Mustafa; Çankaya, Büşra; Yılmaz, Doğan; Kashif, A. U.; Özbay, Ekmel (Institute of Electrical and Electronics Engineers, 2020)
      In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ...
    • Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology 

      Toprak, Ahmet; Yılmaz, Doğan; Özbay, Ekmel (Institute of Physics Publishing Ltd., 2021-12-10)
      In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching ...