Browsing by Author "Yılmaz, Doğan"
Now showing items 1-9 of 9
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AlGaN/GaN-Based laterally gated high-electron-mobility transistors with optimized linearity
(IEEE, 2021-02-01)In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated ... -
DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric
(Institute of Physics Publishing Ltd., 2022-06-23)In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT) with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin width, while keeping the ... -
Design and robustness improvement of high-performance LNA using 0.15 μm GaN technology for X-band applications
(John Wiley & Sons Ltd., 2022-07)In this paper, we present a highly robust GaN-based X-band low-noise amplifier (LNA) showing promising small-signal and noise performance as well as good linearity. The LNA is fabricated using in-house 0.15 μm AlGaN/GaN ... -
Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs
(Institute of Physics Publishing, 2018)This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, ... -
The effect of post-metal annealing on DC and RF performance of AlGaN/GaN HEMT
(Institute of Physics Publishing Ltd., 2022-12-15)The effects of gate post-metal annealing (PMA) on the DC and RF characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) were investigated. The unannealed and post gate-metal annealed AlGaN/GaN HEMTs were ... -
GaN based LNA MMICs for X-band applications
(Institute of Electrical and Electronics Engineers, 2020)In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been ... -
GaN-based single stage low noise amplifier for X-band applications
(IEEE, 2022-07-18)Source degenerated HEMTs are used to achieve good noise matching and better input return loss without degrading the noise figure and reducing the stability. This work presents an MMIC design for the frequency band of 8–11 ... -
Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology
(Institute of Physics Publishing Ltd., 2021-12-10)In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressures by using inductively coupled plasma reactive ion etching ... -
A study on GaN-based betavoltaic batteries
(Institute of Physics Publishing Ltd., 2022-10-27)In this paper, a GaN-based betavoltaic epitaxial structure was grown by metal–organic chemical vapor deposition and a p-type ohmic contact was studied for different Ni/Au metal thickness ratios, temperature dependent in ...
