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    • On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes 

      Zhang, Z. H.; W. L.; Tan, S. T.; Ju, Z.; Ji, Y.; Kyaw, Z.; Zhang, X.; Hasanov, N.; Zhu, B.; Lu, S.; Zhang, Y.; Sun, X. W.; Demir, Hilmi Volkan (Optical Society of America, 2014)
      Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...