Browsing by Author "Tut, Turgut"

Now showing items 1-6 of 6

    • AlxGa1-xN based solar blind Schottky photodiodes 

      Tut, Turgut (Bilkent University, 2004)
      Photodetectors are essential components of optoelectronic integrated circuits and fiber optic communication systems. AlxGa1−xN is a promising material for optoelectronics and electronics. Applications include blue and ...

    • AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain 

      Tut, Turgut; Gokkavas, Mutlu; Inal, Ayşe; Özbay, Ekmel (AIP Publishing LLC, 2007)
      The authors report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1560 under ultraviolet illumination. The solar-blind photodetectors have a sharp cutoff around 276 nm. The dark ...

    • AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain 

      Tut, Turgut; Gökkavas, Mutlu; Özbay, Ekmel (2008)
      We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents ...

    • GaN/AlGaN-based UV photodetectors with performances exceeding the PMTS 

      Tut, Turgut (Bilkent University, 2008)
      The recent developments in high Al-content AlxGa1−xN material growth technology made it possible to fabricate high performance solar-blind photodetectors operating in the ultraviolet (UV) spectral region with improved receiver ...

    • High-performance solar-blind AlGaN photodetectors 

      Özbay, Ekmel; Tut, Turgut; Bıyıklı, N. (SPIE, 2005)
      Design, fabrication, and characterization of high-performance Al xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal ...

    • High-performance solar-blind AlGaN photodetectors 

      Özbay, Ekmel; Bıyıklı, Necmi; Kimukin, İbrahim; Tut, Turgut; Kartaloğlu, Tolga; Aytür, Orhan (IEEE, 2004)
      High-performance aluminum gallium nitride (AlGaN)-based solar-blind (SB) photodetectors were demonstrated using different device structures. The Al x-Ga1-xN layers structure were grown by metalorganic chemical vapor ...